tip120 ... TIP122 tip120 ... TIP122 npn si-epitaxial planar darlington power transistors si-epitaxial planar darlington-leistungs-transistoren npn version 2006-10-17 dimensions - ma?e [mm] 1 = b 2/4 = c 3 = e max. power dissipation with cooling max. verlustleistung mit khlung 65 w collector current kollektorstrom 5 a plastic case kunststoffgeh?use to-220ab weight approx. gewicht ca. 2.2 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging in tubes standard lieferform in stangen maximum ratings (t a = 25c) grenzwerte (t a = 25c) tip120 tip121 TIP122 collector-emitter-volt. ? kollektor-emitter-spg. b open v ceo 60 v 80 v 100 v collector-base-voltage ? kollektor-basis-spg. e open v cbo 60 v 80 v 100 v emitter-base-voltage ? emitter-basis-spannung c open v ebo 5 v power dissipation ? verlustleistung without cooling ? ohne khlung with cooling ? mit khlung t a = 25c t c = 25c p tot p tot 2 w 1 ) 65 w collector current ? kollektorstrom (dc) i c 5 a peak collector current ? kollektor-spitzenstrom i cm 8 a base current ? basisstrom (dc) i b 120 ma junction temperature ? sperrschichttemperatur storage temperature ? lagerungstemperatur t j t s -55...+150c -55?+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain ? kollektor-basis-stromverh?ltnis 2 ) i c = 0.5 a, v ce = 3 v i c = 3 a, v ce = 3 v h fe h fe 1000 1000 ? ? ? ? small signal current gain ? kleinsignal-stromverst?rkung i c = 3 a, v ce = 4 v, f = 1 mhz h fe 4 1 valid, if leads are kept at ambient temp erature at a distance of 5 mm from case gltig wenn die anschlussdr?hte in 5 mm abstand vo m geh?use auf umgebungstemperatur gehalten werden 2 tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 3.8 2.54 0.9 1.5 10 0.2 3.4 3 13.2 1 5 . 7 4 3 2 1 type typ
tip120 ... TIP122 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. collector-emitter saturation volt. ? kollektor-emitter-s?ttigungsspg. 2 ) i c = 3 a, i b = 12 ma i c = 5 a, i b = 20 ma v cesat v cesat ? ? ? ? 2 v 4 v base-emitter voltage ? basis-emitter-spannung 2 ) i c = 3 a, v ce = 3 v v be ? ? 2.5 v collector-emitter cutoff current ? kollektor-emitter-reststrom v ce = 30 v, (b open) v ce = 40 v, (b open) v ce = 50 v, (b open) tip120 tip121 TIP122 i ceo i ceo i ceo ? ? ? ? ? ? 500 na 500 na 500 na collector-base cutoff current ? kollektor-basis-reststrom v cb = 60 v, (e open) v cb = 80 v, (e open) v cb = 100 v, (e open) tip120 tip121 TIP122 i cbo i cbo i cbo ? ? ? ? ? ? 200 na 200 na 200 na collector-base capacitance ? kollektor-basis-kapazit?t v cb = 10 v, i e = i e = 0, f = 100 khz c cb0 ? ? 200 pf thermal resistance junction to ambient air w?rmewiderstand sperrschicht ? umgebende luft r tha < 63 k/w 1 ) thermal resistance junction to case w?rmewiderstand sperrschicht ? geh?use r thc < 3 k/w admissible torque for mounting zul?ssiges anzugsdrehmoment m4 9 10% lb.in. 1 10% nm recommended complementary pnp transistors empfohlene komplement?re pnp-transistoren tip125 ... tip127 equivalent circuit ? ersatzschaltbild 2 tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 1 valid, if leads are kept at ambient temp erature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vo m geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag t 1 t 2 ebc t2 t1 e2 c2 b1
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